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Numéro de référence | NDH8304P | ||
Description | Dual P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Fairchild | ||
Logo | |||
1 Page
NDH8304P
Dual P-Channel Enhancement Mode Field Effect Transistor
May 1997
General Description
SuperSOTTM-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in a very small
outline surface mount package.
Features
-2.7 A, -20 V. RDS(ON) = 0.07 Ω @ VGS = -4.5 V
RDS(ON) = 0.095 Ω @ VGS = -2.7 V.
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
___________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
PD Maximum Power Dissipation
(Note 1)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1)
Thermal Resistance, Junction-to-Case (Note 1)
© 1997 Fairchild Semiconductor Corporation
NDH8304P
-20
±8
-2.7
-10
0.8
-55 to 150
156
40
Units
V
V
A
W
°C
°C/W
°C/W
NDH8304P Rev.C
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Pages | Pages 6 | ||
Télécharger | [ NDH8304P ] |
No | Description détaillée | Fabricant |
NDH8304 | Dual P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
NDH8304P | Dual P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
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