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PDF NDC7002 Data sheet ( Hoja de datos )
| Número de pieza | NDC7002 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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March 1996
NDC7002N
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been designed to minimize
on-state resistance, provide rugged and reliable
performance and fast switching. These devices is
particularly suited for low voltage applications requiring a
low current high side switch.
Features
0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V
High density cell design for low RDS(ON).
Proprietary SuperSOTTM-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High saturation current.
____________________________________________________________________________________________
SOT-6 (SuperSOTTM-6)
Absolute Maximum RatingsTA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
43
52
61
NDC7002N
50
20
0.51
1.5
0.96
0.9
0.7
-55 to 150
130
60
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDC7002N.SAM
1 page  
Typical Electrical Characteristics (continued)
1.16
1.12
I D = 250µA
1.08
1.04
1
0.96
0.92
0.88
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
1.5
1 VGS = 0V
0.5
TJ = 125°C
0.1
25°C
0.01
-55°C
0.001
0.2
0.4 0.6 0.8
1
V SD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
100
50
C iss
20
C oss
10
5 C rss
f = 1 MHz
2 V GS = 0V
1
0.1 0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20
Figure 9. Capacitance Characteristics.
50
10
V = 25V
DS
8 ID = 0.51A
6
4
2
0
0 0.2 0.4 0.6 0.8 1
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
1.2
0.7
VDS = 10V
0.6
0.5
TJ = -55°C
25°C
0.4
125°C
0.3
0.2
0.1
0
0 0.3 0.6 0.9 1.2 1.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDC7002N.SAM
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDC7002.PDF ] | |
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