NDB6060L Datasheet PDF - Fairchild
| Part Number | NDB6060L | |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Manufacturers | Fairchild | |
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There is a preview and NDB6060L download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
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April 1996
NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V.
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP6060L
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
60
60
± 16
± 25
48
144
100
0.67
-65 to 175
275
NDB6060L
Units
V
V
V
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP6060L Rev. D / NDB6060L Rev. E
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Typical Electrical Characteristics (continued)
1.15
ID = 250µA
1.1
1.05
1
0.95
0.9
-50
-25
0 25 50 75 100 125 150 175
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
80
10 TJ = 125°C
1
0.1
25°C
-55°C
0.01
0.001
0.0001
0.2
VGS = 0V
0.4 0.6 0.8 1 1.2 1.4 1.6
V SD , BODY DIODE FORWARD VOLTAGE (V)
1.8
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
4000
3000
2000
Ciss
1000
5 0 0 Coss
300
200
100
1
f = 1 MHz
VGS = 0V
Crss
23
5
10 20
VDS , DRAIN TO SOURCE VOLTAGE (V)
30
50
Figure 9. Capacitance Characteristics.
10
ID = 48A
8
6
V DS= 12V
48V
24V
4
2
0
0 20 40 60
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
80
VIN
VG E N
RGEN
G
RGS
VDD
RL
D
VOUT
DUT
S
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE W IDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP6060L Rev. D / NDB6060L Rev. E
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NDB6060L electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NDB6060L.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
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