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PDF N303AS Data sheet ( Hoja de datos )
| Número de pieza | N303AS | |
| Descripción | N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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September 2002
PWM Optimized
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
N-Channel Logic Level UltraFET® Trench MOSFETs
30V, 75A, 3.2mΩ
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Features
• Fast switching
• rDS(ON) = 0.0026Ω (Typ), VGS = 10V
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
• rDS(ON) = 0.004Ω (Typ), VGS = 4.5V
• Qg (Typ) = 61nC, VGS = 5V
Applications
• DC/DC converters
• Qgd (Typ) = 17nC
• CISS (Typ) = 7000pF
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-220AB
GATE
DRAIN
(FLANGE)
SOURCE
TO-263AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-262AB
G
D
S
MOSFET Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Power dissipation
Derate above
TJ, TSTG Operating and Storage Temperature
Ratings
30
±20
75
75
25
Figure 4
215
1.43
-55 to 175
Units
V
V
A
A
A
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.7
62
43
Package Marking and Ordering Information
Device Marking
N303AS
N303AP
N303AS
Device
ISL9N303AS3ST
ISL9N303AP3
ISL9N303AS3
Package
TO-263AB
TO-220AB
TO-262AA
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
oC/W
oC/W
oC/W
Quantity
800 units
50 units
50 units
©2002 Fairchild Semiconductor Corporation
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
1 page  
Typical Characteristics
10000
CISS = CGS + CGD
10
VDD = 15V
8
COSS ≅ CDS + CGD
6
1000
CRSS = CGD
VGS = 0V, f = 1MHz
300
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 11. Capacitance vs Drain to Source
Voltage
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 75A
ID = 10A
50 100
Qg, GATE CHARGE (nC)
150
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
500
VGS = 4.5V, VDD = 15V, ID = 24A
400
td(OFF)
300
200
100
tr
tf
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
Figure 13. Switching Time vs Gate Resistance
Test Circuits and Waveforms
800
VGS = 10V, VDD = 15V, ID = 24A
600
td(OFF)
400
tf
200
tr
0
0
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
td(ON)
50
Figure 14. Switching Time vs Gate Resistance
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 15. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 16. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
Bottomless™
FACT Quiet Series™
FAST®
CoolFET™
FASTr™
CROSSVOLT™ FRFET™
DOME™
GlobalOptoisolator™
EcoSPARK™
E2CMOS™
EnSigna™
GTO™
HiSeC™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet N303AS.PDF ] | |
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