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Número de pieza NTE948SM
Descripción Integrated Circuit Quad Operational Amplifier
Fabricantes NTE Electronics 
Logotipo NTE Electronics Logotipo



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NTE948 & NTE948SM
Integrated Circuit
Quad Operational Amplifier
Description:
The NTE948 (14–Lead DIP) and NTE948SM (SOIC–14) consists of four independent, high gain, in-
ternally compensated, low power operational amplifiers which have been designed to provide func-
tional characteristics identical to those of the familiar 741 operational amplifier.
Features:
Low Supply Current Drain
Class AB Output Stage – No Crossover Distortion
Low Input Offset Voltage
Low Input Offset Current
Low Input Bias Current
High Degree of Isolation Between Amplifiers
Overload Protection for Inputs and Outputs
Available in 14–Lead DIP (NTE948) and Surface Mount (NTE948SM)
Absolute Maximum Ratings:
Supply Voltage, VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±36V
Output Short Circuit Duration (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Maximum Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Note 1. Any of the amplifier outputs can be shorted to ground indefinitely; however, more than one
should not be simultaneously shorted as the maximum junction temperature will be exceeded.
Note 2. The maximum power dissipation for these devices must be derated at elevated tempera-
tures and is dicated by TJ(MAX), RthJA, and the ambient temperature, TA. The maximum avail-
able power dissipation at any temperature is PD = (TJ(MAX) – TA)/RthJA or the 25°C PD(MAX),
which ever is less.

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