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PDF NTE909 Data sheet ( Hoja de datos )

Número de pieza NTE909
Descripción Integrated Circuits Operational Amplifier
Fabricantes NTE Electronics 
Logotipo NTE Electronics Logotipo



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NTE909 & NTE909D
Integrated Circuits
Operational Amplifier
Description:
These devices are monolithic operational amplifiers intended for general–purpose applications. Op-
eration is completely specified over the range of voltages commonly used for these devices. The de-
sign, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the
class–B output stage gives a large output capability with minimum power drain.
External components are used to frequency compensate the amplifier. Although the unity–gain com-
pensation network specified will make the amplifiers unconditionally stable in all feedback configura-
tions, compensation can be tailored to optimize high–frequency performance for any gain setting.
The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift
at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the am-
plifier.
Absolute Maximum Ratings:
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18V
Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Output Short–Circuit Duration (TA = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 seconds
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Lead Temperature (Soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Note 1 For operating at elevated temperatures, the device must be derated based on a 100°C maxi-
mum junction temperature and a thermal resistance 150°C/W junction to ambient or 45°C/W,
junction to case for the metal can package.
Electrical Characteristics: (0°C TA = +70°C, ±9V VS ≤ ±15V, C1 = 5000pF, R1 = 1.5k,
C2 = 200pF and R2 = 51unless otherwise specified)
Parameter
Test Conditions
Min Typ Max Unit
Input Offset Voltage
Input Bias Current
Input Offset Current
TA = +25°C, RS 10k
TA = +25°C
TA = TMIN
TA = +25°C
TA = TMIN
TA = TMAX
– 2.0 7.5 mV
– 300 1500 nA
– 0.36 2.0 µA
– 100 500 nA
– 75 400 nA
– 125 750 nA

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