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NTE Electronics - Silicon NPN Transistor Color TV Horizontal Output w/Internal Damper Diode

Numéro de référence NTE89
Description Silicon NPN Transistor Color TV Horizontal Output w/Internal Damper Diode
Fabricant NTE Electronics 
Logo NTE Electronics 





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NTE89 fiche technique
NTE89
Silicon NPN Transistor
Color TV Horizontal Output
w/Internal Damper Diode
Features:
D Color TV Horizontal Output Applications
D High Voltage: VCBO = 1500V
D Low Saturation Voltage: VCE(sat) = 5V Max (IC = 5A, IB = 1A)
D High Speed: tf = 1.0µs Max
D Built–In Damper Diode
D Glass Passivated Collector–Base Junction
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –6A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter–Base Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Forward Voltage (Damper Diode)
Transition Frequency
Collector Output Capacitance
Fall Time
ICBO VCB = 500V, IE = 0
V(BR)EBO IE = 200mA, IC = 0
hFE VCE = 5V, IC = 1A
VCE(sat) IC = 5A, IB = 1A
VBE(sat) IC = 5A, IB = 1A
–VF IF = 6A
fT VCE = 10V, IC = 100mA
Cob VCB = 10V, IE = 0, f = 1MHz
tf ICP = 5A, IB1(end) = 1A
Min Typ Max Unit
– – 10 µA
5––V
8 12 –
–35V
– – 1.5 V
– 1.6 2.0 V
– 3 – MHz
– 165 – pF
– 0.5 1.0 µs

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