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NTE Electronics - Integrated Circuit Dual / Low Power / JFET OP Amplifier

Numéro de référence NTE889
Description Integrated Circuit Dual / Low Power / JFET OP Amplifier
Fabricant NTE Electronics 
Logo NTE Electronics 





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NTE889 fiche technique
NTE889M
Integrated Circuit
Dual, Low Power, JFET OP Amplifier
Description:
The NTE889M is a JFET–input operational amplifier in an 8–Lead DIP type package designed for low
power applications and features high input impedance, low input bias current, and low input offset
current. Advanced design techniques allow for higher slew rates, gain bandwidth products, and out-
put swing.
Features:
D Low Supply Current: 200µA/Amplifier
D Low Input Bias Current: 5pA
D High Gain Bandwidth: 2MHz
D High Slew rate: 6V/µs
D High Input Impedance: 1012
D Large Output Voltage Swing: ±14V
D Output Short Circuit Protection
Absolute Maximum Ratings:
Supply Voltage (From VCC to VEE), VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +36V
Input Differential Input Voltage (Note 1), VIDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Input Voltage Range (Note 1, Note 2), VIR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Output Short–Circuit Duration (Note 3), ts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite Seconds
Operating Junction Temperature (Note 3), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –60° to +150°C
Note 1. Differential voltages are at the non–inverting input terminal with respect to the inverting input
terminal.
Note 2. The magnitude of the input voltage must never exceed the magnitude of the supply voltage
or 15V, whchever is less.
Note 3. Power dissipation must be considered to ensure maximun junction temperature (TJ) is not
exceeded.

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