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PDF NTE859 Data sheet ( Hoja de datos )
| Número de pieza | NTE859 | |
| Descripción | Integrated Circuit Quad / Low Noise / JFET Input Operational Amplifier | |
| Fabricantes | NTE Electronics | |
| Logotipo |  |
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NTE859/NTE859SM
Integrated Circuit
Quad, Low Noise, JFET Input
Operational Amplifier
Description:
The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational am-
plifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low
harmonic distortion and low noise make these devices ideally suited as amplifiers for high–fidelity and
audio preamplifier applications. Each amplifier features JFET–inputs (for high input impedance)
coupled with bipolar output stages all integrated on a single monolithic chip.
Features:
D Low Power Consumption
D Wide Common–Mode and Differential Voltage Ranges
D Low Input Bias and Offset Currents
D Output Short–Circuit Protection
D Low Total Harmonic Distortion: 0.003% Typ
D Low Noise: Vn = 18nV√HZ Typ
D High Input Impedance: JFET–Input Stage
D Internal Frequency Compensation
D Latch–Up Free Operation
D High Slew Rate: 13V/µs Typ
Absolute Maximum Ratings: (TA = 0 to +70°C unless otherwise specified)
Supply Voltage (Note 1), VCC(+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Supply Voltage (Note1), VCC(–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –18V
Differential Input Voltage (Note 2), VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Input Voltage Range (Note 1, Note 3),VIDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Duration of Output Short Circuit (Note 4),tS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/°C
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 1/16” from Case for 10sec), TL . . . . . . . . . . . . . . . . . . +260°C
Note 1. All voltage values, except differential voltages, are with reapect to the midpoint between
VCC(+) and VCC(–).
Note 2. Differential voltages are at the non–inverting input pin with respect to the inverting pin.
Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage
or 15V, whichever is less.
Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages
must be limited to ensure that the dissipation rating is not exceeded.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet NTE859.PDF ] | |
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