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Numéro de référence | NTE85 | ||
Description | Silicon NPN Transistor General Purpose Amplifier | ||
Fabricant | NTE Electronics | ||
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1 Page
NTE85
Silicon NPN Transistor
General Purpose Amplifier
Applications:
D Medium Power Amplifiers
D Class B Audio Outputs
D Hi–Fi Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
be impaired.
Note 2. These ratings are based on a maximum junction temperature of 150°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown
Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 3
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0
Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0
Collector Cutoff Voltage
Emitter Cutoff Current
ICBO
IEBO
VCB = 20V, IE = 0
VBE = 3V, IC = 0
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Min Typ Max Unit
30 – – V
50 – – V
5.0 – – V
– – 100 nA
– – 100 nA
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Pages | Pages 2 | ||
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