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Numéro de référence | NTE6412 | ||
Description | Bilateral Trigger Diodes (DIACS) | ||
Fabricant | NTE Electronics | ||
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1 Page
NTE6407, NTE6408,
NTE6411, NTE6412
Bilateral Trigger Diodes (DIACS)
Description:
The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics
from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity
of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating
of the DIAC.
Features:
D Glass–Chip Passivation
D DO35 Type Trigger Package
D Wide Voltage Range Selection
Absolute Maximum Ratings:
Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1µF
Device Dissipation (TA = –40° to +40°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above +40°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/°C
Operating Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278°C/W
Thermal Resistance, Junction–to–Lead (Note 1), RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Lead Temperature (During Soldering, 1/16” (1.59mm) from case, 10sec max), TL . . . . . . . . +230°C
Note 1. Based on maximum lead temperature of +85°C at ≤ 250mW.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Breakover Voltage (Forward and Reverse)
NTE6407
NTE6408
VBO
NTE6411
NTE6412
Breakover Voltage Symmetry
NTE6407, NTE6408
NTE6411
∆VBO Note 2
NTE6412
Note 2. ∆VBO = [ |+VBO| – |–VBO| ].
Min Typ Max Unit
24 28 32
28 32 36
35 40 45
56 63 70
V
V
V
V
––2V
––3V
––4V
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Pages | Pages 2 | ||
Télécharger | [ NTE6412 ] |
No | Description détaillée | Fabricant |
NTE6410 | Unijunction Transistor (UJT) | NTE Electronics |
NTE6411 | Bilateral Trigger Diodes (DIACS) | NTE Electronics |
NTE6412 | Bilateral Trigger Diodes (DIACS) | NTE Electronics |
NTE6415 | Bidirectional Thyristor Diodes (SIDAC) | NTE Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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