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PDF NTE6410 Data sheet ( Hoja de datos )
| Número de pieza | NTE6410 | |
| Descripción | Unijunction Transistor (UJT) | |
| Fabricantes | NTE Electronics | |
| Logotipo |  |
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NTE6410
Unijunction Transistor (UJT)
Description:
The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and
timing circuits, sensing circuits and thyristor trigger circuits.
Absolute Maximum Ratings: (TA = +25°C unless other specified)
RMS Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/°C
RMS Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak–Pulse Emitter Current (Note 1), IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage (Note 2), VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Duty cycle ≤ 1%, PRR = 10 PPS
Note 2. Based upon power dissipation at TA = +25°C
Electrical Characteristics: (TA = +25°C unless other specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Intrinsic Standoff Ratio
η VB2B1 = 10V, Note 3
0.70 – 0.85
Interbase Resistance
Interbase Resistance Temperature Coefficient
RBB
αRBB
4.0 6.0 9.1 kΩ
0.1 – 0.9 %/°C
Emitter Saturation Voltage
VBE1(sat) VB2B1 = 10V, IE = 50mA, Note 4
– 2.5 –
V
Modulated Interbase Current
Emitter Reverse Current
Peak–Point Emitter Current
Valley–Point Current
IB2(Mod)
IEB2O
IP
IV
VB2B1 = 10V, IE = 50mA
VB2E = 30V, IB1 = 0
VB2B1 = 25V
VB2B1 = 20V, RB2 = 100Ω, Note 4
– 15
– 0.005
– 1.0
4.0 7.0
–
1.0
5.0
–
mA
µA
µA
mA
Base–One Peak Pulse Voltage
VOB1
5.0 8.0 – V
Note 3. Intrinsic standoff ratio, is defined in terms of peak–point voltage, VP, by means of the equa-
tion: VP = η VB2B1 VF, where VF is approximately 0.49 volts at +25°C @ IF = 10µA and de-
creases with temperature at approximately 2.5mV/°C. Components R1, C1, and the UJT
form a relaxation oscillator, the remaining circuitry serves as a peak–voltage detector. The
forward drop of Diode D1 compensates for VF. To use, the “call” button is pushed, and R3
is adjusted to make the current meter, M1, read full scale. When the “call” button is released,
the value of η is read directly from the meter, if full scale on the meter reads 1.0.
Note 4. Use pulse techniques: PW ∼ 300µs, duty cycle ≤ 2.0% to avoid internal heating, which may
result in erroneous readings.
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| PDF Descargar | [ Datasheet NTE6410.PDF ] | |
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