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NTE Electronics - Silicon Complementary Transistors High Power Audio / Disk Head Positioner for Linear Applications

Numéro de référence NTE60
Description Silicon Complementary Transistors High Power Audio / Disk Head Positioner for Linear Applications
Fabricant NTE Electronics 
Logo NTE Electronics 





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NTE60 fiche technique
NTE60 (NPN) & NTE61 (PNP)
Silicon Complementary Transistors
High Power Audio, Disk Head Positioner
for Linear Applications
Description:
The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
D High Safe Operating Area: 250W @ 50V
D For Low Distortion Complementary Designs
D High DC Current Gain: hFE = 25 Min @ IC = 5A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70°C/W
Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), TL . . . . . . . . . . . . . . . . +265°C
Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 2
140 – – V
Collector Cutoff Current
ICEX VCE = 140V, VBE(off) = 1.5V
– – 100 µA
VCE = 140V, VBE(off) = 1.5V, TC = +150°C – – 2 mA
ICEO VCE = 140V, IB = 0
– – 250 µA
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
– – 100 µA
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

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