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PDF NTE593 Data sheet ( Hoja de datos )
| Número de pieza | NTE593 | |
| Descripción | Silicon Diode / High Speed Switch | |
| Fabricantes | NTE Electronics | |
| Logotipo |  |
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NTE593
Silicon Diode, High Speed Switch
Description:
The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This
device is intended for high–speed switching in hybrid thick–film circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V
Non–Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA
DC Forward Current (TA ≤ +25°C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Measured under pulse conditions: tp ≤ 0.5ms, IF(AV) = 150mA, t(av) ≤ 1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Forward Voltage
VF IF = 1mA
– – 715 mV
IF = 10mA
– – 855 mV
IF = 50mA
– – 1000 mV
Reverse Current
IF = 150mA
IR VR = 75V
VR = 75V, TJ = +150°C
–
–
–
– 1250 mV
– 1 µA
– 50 µA
Diode Capacitance
Cd VR = 0, f = 1MHz
– – 2 pF
Reverse Recovery Time
(When switched from
IF = 30mA to IR = 30mA
Recovery Charge
(When switched from
IF = 10mA to VR = 5V
trr measured at IR = 1mA,
RL = 100Ω
Qs RL = 100Ω
–
–
– 6 ns
– 45 pC
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE593.PDF ] | |
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