DataSheet.es    


PDF NTE5645 Data sheet ( Hoja de datos )

Número de pieza NTE5645
Descripción TRIAC - 10A Isolated Tab
Fabricantes NTE Electronics 
Logotipo NTE Electronics Logotipo



Hay una vista previa y un enlace de descarga de NTE5645 (archivo pdf) en la parte inferior de esta página.


Total 2 Páginas

No Preview Available ! NTE5645 Hoja de datos, Descripción, Manual

NTE5645
TRIAC – 10A
Isolated Tab
Description:
The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC
and MOS devices and features proprietary, void–free glass passivated chips.
This device is a bi–directional triode thyristor and may be switched from off–state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C, Conduction Angle of 180°C), IT(RMS) . . . . . . . . . . . . . . . . . 10A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 100A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate–Power Dissipation (IGT IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
IDRM VDRM = 600V, Gate Open, TJ = +100°C – – 2 mA
Max. On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
VTM
IH
Critical
dv/dt
IT = 14A
Gate Open
VD = 600V, Gate Open, TC = +100°C
– – 2.2 V
– – 50 mA
– 5 – V/µs
DC Gate Trigger Current
T2 (+) Gate (+), T2 (–) Gate (–)
T2 (+) Gate (–), T2 (–) Gate (+)
IGT VD = 12V, RL = 30
– – 50 mA
– – 80 mA

1 page





PáginasTotal 2 Páginas
PDF Descargar[ Datasheet NTE5645.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
NTE5640TRIAC / 2.5ANTE Electronics
NTE Electronics
NTE5643TRIAC / 2.5ANTE Electronics
NTE Electronics
NTE5645TRIAC - 10A Isolated TabNTE Electronics
NTE Electronics
NTE5646TRIAC - Internally TriggeredNTE Electronics
NTE Electronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar