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NTE Electronics - TRIAC - 8A Isolated Tab

Numéro de référence NTE5638
Description TRIAC - 8A Isolated Tab
Fabricant NTE Electronics 
Logo NTE Electronics 





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NTE5638 fiche technique
NTE5638
TRIAC – 8A
Isolated Tab
Description:
The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and
MOS devices and features proprietary, void–free glass passivated chips.
This device is a bi–directional triode thyristor and may be switched from off–state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5638 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +110°C), VDRM . . . . . . . . . . . . . . . . . . . . . 400V
RMS On–State Current (TC = +80°C, Conduction Angle of 360°C), IT(RMS) . . . . . . . . . . . . . . . . . . 8A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . . 80A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate–Power Dissipation (IGT IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
IDRM
VDRM = 400V, Gate Open, TJ =
+110°C
– – 0.5 mA
Max. On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
VTM
IH
Critical
dv/dt
IT = 8A
Gate Open
VD = 400V, Gate Open, TC = +100°C
– – 1.6 V
– – 25 mA
– 30 – V/µs
Critical Rate–of–Rise of Commutation
Voltage
DC Gate Trigger Current
T2 (+) Gate (+), T2 (–) Gate (–)
T2 (+) Gate (–), T2 (–) Gate (+)
Commutation VD = 400V, IT = 8A, Gate Unenergized,
dv/dt
TC = +80°C
IGT VD = 12V, RL = 60
2 – V/µs
– 10 mA

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