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Numéro de référence | NTE5517 | ||
Description | Silicon Controlled Rectifier (SCR) | ||
Fabricant | NTE | ||
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1 Page
NTE5517 thru NTE5519
Silicon Controlled Rectifier (SCR)
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM
NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Reverse Voltage (TJ = +100°C), VRRM
NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 350A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Operating Temperatue Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9°C/W
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
IDRM, TJ = +100°C, Gate Open,
IRRM VDRM and VRRM = Max. Rating
– – 2.0 mA
Maximum On–State Voltage (Peak) VTM TC = +25°C
– – 1.6 V
Peak On–State Current
ITM
– – 70 A
DC Holding Current
IH TC = +25°C, Gate Open
– – 50 mA
DC Gate–Trigger Current
IGT Anode Voltage = 12V, RL = 30Ω, TC = +25°C – – 25 mA
DC Gate–Trigger Voltage
VGT Anode Voltage = 12V, RL = 30Ω, TC = +25°C – – 2.0 V
Gate Controlled Turn–On Time
tgt td + tr, IGT = 150mA
– 2.5 – µs
Critical Rate–of–Rise of
Off–State Voltage
Critical TC = +100°C, Gate Open
dv/dt
– 100 – V/µs
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Pages | Pages 2 | ||
Télécharger | [ NTE5517 ] |
No | Description détaillée | Fabricant |
NTE5511 | Silicon Controlled Rectifier (SCR) 5 Amp | NTE |
NTE5513 | Silicon Controlled Rectifier (SCR) 5 Amp | NTE |
NTE5514 | Silicon Controlled Rectifier (SCR) | NTE |
NTE5516 | Silicon Controlled Rectifier (SCR) | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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