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PDF NTE5499 Data sheet ( Hoja de datos )
| Número de pieza | NTE5499 | |
| Descripción | Silicon Controlled Rectifier (SCR) 12 Amp | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE5498 & NTE5499
Silicon Controlled Rectifier (SCR)
12 Amp
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Peak Repetitive Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), VDRM, VRRM
NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (All Conduction Angles, TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . 12A
Average On–State Current (Half Cycle, 180° Conduction Angle, TC = +85°C), IT(AV) . . . . . . . . 7.6A
Non–Repetitive On–State Current (Half Cycle, 60Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A
Non–Repetitive On–State Current (Half Cycle, 50Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
Circuit Fusing Considerations (Half Cycle, t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A2s
Peak Gate Current (10µs Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate Dissipation (10µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Dissipation (20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +250°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Off–State Leakage Current
On–State Voltage
On–State Threshold Voltage
On–State Slope Resistance
IDRM,
IRRM
VT
VT(TO)
rT
VDRM + VRRM, RGK = 1kΩ
IT = 24A, TJ = +25°C
TJ = +125°C
TJ = +125°C
TJ = +125°C
TJ = +25°C
Gate–Trigger Current
IGT VD = 7V
Gate–Trigger Voltage
VGT VD = 7V
Min Typ Max
– – 1.5
– – 5.0
– – 1.8
– – 1.0
– – 36
5 – 10
– – 2.0
Unit
mA
µA
V
V
mΩ
mA
V
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE5499.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTE5491 | Silicon Controlled Rectifier (SCR) 10 Amp | NTE |
| NTE5496 | Silicon Controlled Rectifier (SCR) 10 Amp | NTE |
| NTE5498 | Silicon Controlled Rectifier (SCR) 12 Amp | NTE |
| NTE5499 | Silicon Controlled Rectifier (SCR) 12 Amp | NTE |
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