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PDF NTE5460 Data sheet ( Hoja de datos )
| Número de pieza | NTE5460 | |
| Descripción | Silicon Controlled Rectifier (SCR) | |
| Fabricantes | NTE | |
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NTE5460
Silicon Controlled Rectifier (SCR)
Description:
The NTE5460 is designed primarily for half–wave AC control applications such as motor controls,
heating controls, and power supply crowbar circuits.
Features:
D Glass Passivated Junction with Center Gate Fire for Greater Parameter Uniformity and Stability
D Small, Rugged Construction for Low Thermal Resistance, High Heat Dissipation, and Durability
D 300A Surge Current Capability
D Insulated Package Simplifies Mounting
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . 800V
Repetitive Peak Reverse Voltage (TJ = –40° to +125°C, Note 1), VRRM . . . . . . . . . . . . . . . . . . . 800V
On–State RMS Current (TC = +70°C, Full Cycle Sine Wave 50 to 60Hz, Note 2), IT(RMS) . . . . . 25A
Peak Non–Repetitive Surge Current, ITSM
(One Full Cycle, 60Hz, TC = +70°C, Preceeded and Followed by Rated Current) . . . . 300A
Circuit Fusing (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power (TC = +70°C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current (TC = +70°C, Pulse Width = 10µs), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
RMS Isolation Voltage (TA = +25°C, Relative Humidity ≤ 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Typical Thermal Resistance, Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
Note 2. The case temperature reference point for all TC measurements is a point on the center lead
of the package as close as possible to the plastic body.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE5460.PDF ] | |
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