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PDF NTE5351 Data sheet ( Hoja de datos )
| Número de pieza | NTE5351 | |
| Descripción | Silicon Controlled Rectifier (SCR) for High Speed Switching | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE5351
Silicon Controlled Rectifier (SCR)
for High Speed Switching
Features:
D Fast Turn–Off Time
D High di/dt and dv/dt Capabilities
D Shorted–Emitter Gate–Cathode Construction
D Center Gate Construction
Non–Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRSOM . . . . . . . . . . . . . . . . . . . . . 700V
Non–Repetitive Peak Off–State Voltage (Gate Open, Note 1), VDSOM . . . . . . . . . . . . . . . . . . . . 700V
Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRROM . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (Gate Open, Note 1), VDROM . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +60°C, 180° conduction angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 5.0A
Average On–State Current (TC = +60°C, 180° conduction angle), IT(AV) . . . . . . . . . . . . . . . . . . 3.2A
Peak Surge (Non–Repetitive) On–State Current, ITSM
(TC = +60°C, for one full cycle at applied voltage)
60Hz (Sinusoidal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
50Hz (Sinusoidal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A
Rate of Change of On–State Current (VD = 600V, IGT = 50mA, t = 1 to 8.3ms), di/dt . . . . . 200A/µs
Fusing Current (TJ = –40° to +100°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak Forward Gate Power Dissipation (10µs Max, Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . . 3W
Peak Reverse Gate Power Dissipation (10µs Max, Note 2), PRGM . . . . . . . . . . . . . . . . . . . . . . . . 3W
Average Gate Power Dissipation (10µs Max, Note 2), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Lead Temperature (During Soldering, 1/32” from seating plane, 10sec max), TL . . . . . . . . . +225°C
Note 1. These values do not apply if there is a positive gate signal. Gate must be negatively biased.
Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum
is permitted.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE5351.PDF ] | |
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