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Numéro de référence | NTE506 | ||
Description | Silicon Rectifier Diode | ||
Fabricant | NTE | ||
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1 Page
NTE506
Silicon Rectifier Diode
Description
The NTE506 is a silicon rectifier diode is an axial lead package designed for fast recovery, damper
and blanking applications.
Maximum Ratings and Electrical Characteristics:
Maximum Peak Reverse Voltage, PRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400V
Maximum Average Rectified Forward Current (Half–Wave, 60Hz, TA = +25°C), IO . . . . . . . . . . . 2A
Maximum Forward Peak Surge Current (8.3ms Superimposed), IFSM(Surge) . . . . . . . . . . . . . . . 30A
Maximum Reverse Current (PRV = 1400V, TA = +25°C), IR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5µA
Maximum Forward Voltage (IFM = 1A, TA = +25°C), VFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1V
Maximum Reverse Recovery Time, trr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
1.102
(28.0)
Min
.275
(7.0)
Max
.047 (1.19) Dia Max
.157 (4.0)
Dia Max
Color Band Denotes Cathode
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Pages | Pages 1 | ||
Télécharger | [ NTE506 ] |
No | Description détaillée | Fabricant |
NTE50 | Silicon Complementary Transistors | NTE |
NTE5000A | Zener Diode / 1/2 Watt 5% Tolerance | NTE |
NTE5001A | (NTE5000A - NTE5060A) Zener Diode / 1/2 Watt 5% Tolerance | NTE |
NTE5002A | (NTE5000A - NTE5060A) Zener Diode / 1/2 Watt 5% Tolerance | NTE |
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