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NTE - MOSFET N-Ch / Enhancement Mode High Speed Switch

Numéro de référence NTE492
Description MOSFET N-Ch / Enhancement Mode High Speed Switch
Fabricant NTE 
Logo NTE 





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NTE492 fiche technique
NTE492
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Note 2. Pulse Width 300µs, Duty Cycle 2%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Zero–Gate–Voltage Drain Current
Drain–Source Breakdown Voltage
Gate Reverse Current
ON Characteristics (Note 2)
IDSS VDS = 130V, VGS = 0
V(BR)DSX VGS = 0, ID = 100µA
IGSS VGS = 15V, VDS = 0
Gate Threshold Voltage
Static Drain–Source ON Resist-
ance
VGS(Th) ID = 1mA, VDS = VGS
rDS(on) VGS = 10V, ID = 100mA
Small–Signal Characteristics
VGS = 10V, ID = 250mA
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Forward Transconductance
Ciss
Crss
Coss
gfs
VDS = 25V, VGS = 0, f = 1MHz
VDS = 25V, VGS = 0, f = 1MHz
VDS = 25V, VGS = 0, f = 1MHz
VDS = 25V, ID = 250mA
Note 2. Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
– – 30
200 – –
– 0.01 10.0
nA
V
nA
1.0 – 3.0
– 4.5 6.0
– 4.8 6.4
V
– 60 – pF
– 6.0 – pF
– 30 – pF
200 400 – mmhos

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