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NTE - MOSFET N-Ch / Enhancement Mode High Speed Switch

Numéro de référence NTE491
Description MOSFET N-Ch / Enhancement Mode High Speed Switch
Fabricant NTE 
Logo NTE 





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NTE491 fiche technique
NTE491
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, Rth (JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5°C/W
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . +300°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Zero–Gate–Voltage Drain Current
Drain–Source Breakdown Voltage
Gate–Body Leakage Current, Forward
ON Characteristics (Note 1)
IDSS
V(BR)DSS
IGSSF
VDS = 48V, VGS = 0
VDS = 48V, VGS = 0, TJ = +125°C
VGS = 0, ID = 10µA
VGSF = 15V, VDS = 0
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source ON–Voltage
ON–State Drain Current
Forward Transconductance
VGS(Th)
rDS(on)
VDS(on)
Id(on)
gfs
ID = 1mA, VDS = VGS
VGS = 10V, ID = 500mA
VGS = 4.5V, ID = 75mA
VGS = 10V, ID = 500mA
VGS = 4.5V, ID = 75mA
VGS = 4.5V, VDS = 10V
VDS = 10V, ID = 200mA
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
– – 1.0 µA
– – 1.0 mA
60 – –
V
– – –10 nA
0.8 – 3.0 V
– – 5.0
– – 6.0
– – 2.5 V
– – 0.45 V
75 – –
mA
100 – – µmhos

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