DataSheetWiki


NTE467 fiches techniques PDF

NTE - Silicon N-channel JFET Transistor Chopper / High Speed Switch

Numéro de référence NTE467
Description Silicon N-channel JFET Transistor Chopper / High Speed Switch
Fabricant NTE 
Logo NTE 





1 Page

No Preview Available !





NTE467 fiche technique
NTE467
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V(BR)GSS IG = 10µA, VDS = 0
30 – – V
Gate Reverse Current
IGSS VGS = –15V, VDS = 0
– – 1.0 nA
VGS = –15V, VDS = 0, TA = +100°C
– – 1.0 µA
Drain Cutoff Current
ID(off) VDS = 15V, VGS = –12V
– – 1.0 nA
VDS = 15V, VGS = –12V, TA = +100°C –
– 1.0 µA
ON Characteristics
Zero–Gate Voltage Drain Current
Drain–Source ON–Voltage
Static Drain–Source ON Resistance
IDSS
VDS(on)
rDS(on)
VDS = 20V, VGS = 0, Note 1
ID = 12mA, VGS = 0
ID = 1mA, VGS = 0
50 –
– mA
– – 0.5 V
– – 30
Input Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Ciss VGS = –12V, VDS = 0, f = 1MHz
Crss VGS = –12V, VDS = 0, f = 1MHz
– – 10 pF
– – 4 pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 10V, VGS(on) = 0,
VGS(off) = 10V, ID(on) = 12mA,
RG = 50
– – 4 ns
– – 5 ns
– – 5 ns
– – 10 ns
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 3%.

PagesPages 2
Télécharger [ NTE467 ]


Fiche technique recommandé

No Description détaillée Fabricant
NTE46 Silicon NPN Transistor Darlington / General Purpose Amplifier / Preamp / Driver NTE
NTE
NTE460 Silicon P-Channel JFET Transistor AF Amp NTE
NTE
NTE464 Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications NTE
NTE
NTE465 Silicon Complementary MOSFET Transistors NTE
NTE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche