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PDF NTE460 Data sheet ( Hoja de datos )
| Número de pieza | NTE460 | |
| Descripción | Silicon P-Channel JFET Transistor AF Amp | |
| Fabricantes | NTE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NTE460 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE460
Silicon P–Channel JFET Transistor
AF Amp
Absolute Maximum Ratings:
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
ON Characteristics
V(BR)GSS IG = 10µA, VDS = 0
IGSS VGS = 10V, VDS = 0
VGS = 10V, VDS = 0, TA = +150°C
20 –
–
V
– – 10 nA
– – 10 µA
Zero–Gate–Voltage Drain Current
Gate–Source Voltage
Drain–Source Resistance
Small–Signal Characteristics
IDSS VDS = –10V, VGS = 0, Note 1
VGS VDG = –15V, ID = 10µA
rDS ID = 100µA, VGS = 0
2.0 – 6.0 mA
– – 6.0 V
– – 800 Ω
Forward Transfer Admittance
Output Admittance
Reverse Transfer Conductance
Input Conductance
Inpu Capacitance
Functional Characteristics
|yfs| VDS = 10V, ID = 2mA, f = 1kHz, Note 1
1500 – 3000 µmhos
VDS = 10V, ID = 2mA, f = 10MHz, Note 1 1350 –
– µmhos
|yos| VDS = 10V, ID = 2mA, f = 1kHz
– – 40 µmhos
|yrs| VDS = 10V, ID = 2mA, f = 1kHz
– – 0.1 µmhos
|yis| VDS = 10V, ID = 2mA, f = 1kHz
– – 0.2 µmhos
Ciss VDS = 10V, VGS = 1V, f = 1MHz
– – 20 pF
Noise Figure
NF VDS = –5V, ID = 1mA, Rg = 1MΩ, f = 1kHz –
– 3.0 dB
Note 1. Pulse Test: PulseWidth ≤ 630ms, Duty Cycle ≤ 10%.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE460.PDF ] | |
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