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NTE - Silicon PNP Transistor TV Vertical Output (Compl to NTE375)

Numéro de référence NTE398
Description Silicon PNP Transistor TV Vertical Output (Compl to NTE375)
Fabricant NTE 
Logo NTE 





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NTE398 fiche technique
NTE398
Silicon PNP Transistor
TV Vertical Output
(Compl to NTE375)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width 10ms, Duty Cycle 50%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 150V, IE = 0
– – 50 µA
Emitter Cutoff Current
IEBO VEB = 4V, IC = 0
– – 50 µA
DC Current Gain
hFE VCE = 10V, IC = 400mA, Note 2 60 – 120
Gain Bandwidth Product
fT VCE = 10V, IC = 400mA, Note 2 – 5 – MHz
Collector–Emitter Saturation Voltage VCE(sat) IC = 500A, IB = 50mA
– – 1.0 V
Note 2. Pulse Width 350µs, Duty Cycle 25%/Pulsed.

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