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NTE395 fiches techniques PDF

NTE - Silicon PNP Transistor Wide Band Linear Amplifier

Numéro de référence NTE395
Description Silicon PNP Transistor Wide Band Linear Amplifier
Fabricant NTE 
Logo NTE 





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NTE395 fiche technique
NTE395
Silicon PNP Transistor
Wide Band Linear Amplifier
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Power Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 485°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 775°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Cutoff Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Static Forward Current Transfer Ratio
Base–Emitter Voltage
Knee Voltage
Transition Frequency
Maximum Oscillation Frequency
Output Capacitance
ICBO VCB = 15V, IE = 0
V(BR)CBO IC = 100µA, IE = 0
V(BR)CEO IC = 5mA, IB = 0
V(BR)EBO IE = 10µA, IC = 0
h21E VCE = 10V, IC = 10mA, Note 1
VBE VCE = 10V, IC = 10mA
VCEK IC = 20mA, Note 2
fT VCE = 15V, IC = 10mA
f VCE = 15V, IC = 10mA
C22b VCB = 15V, IE = 0, f = 1MHz
Min Typ Max Unit
– – 50 nA
30 – – V
25 – – V
3––V
20 –
– 0.75 –
V
– 0.8 –
V
1.4 2.3 – GHz
– 6.5 – GHz
– 1.1 – pF
Note 1. Pulsed.
Note 2. VCEK tested with IC = 100ma and IB = values for which IC = 110mA at VCE = 1V.

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