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NTE - Silicon NPN Transistor Power Amp / High Voltage Switch

Numéro de référence NTE394
Description Silicon NPN Transistor Power Amp / High Voltage Switch
Fabricant NTE 
Logo NTE 





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NTE394 fiche technique
NTE394
Silicon NPN Transistor
Power Amp, High Voltage Switch
Description:
The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use
in high voltage, fast switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage (IC = 0), VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Power Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Cutoff Current
ICEO VCE = 300V, IB = 0
Emitter–Base Cutoff Current
Collector–Emitter Sustaining Voltage
ICES
IEBO
VCEO(sus)
VCE = 500V, VEB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0, Note 1
Collector–Emitter Saturation Voltage
VCE(sat) IC = 3A, IB = 0.6A, Note 1
Base–Emitter ON Voltage
VBE(on) IC = 3A, VCE = 10V, Note 1
DC Current Gain
hFE IC = 0.3A, VCE = 10V
IC = 3A, VCE = 10V
Min Typ Max Unit
– – 1 mA
– – 1 mA
– – 1 mA
400 – – V
– – 1.5 V
– – 1.5 V
30 150 –
10 –
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.

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