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Numéro de référence | NTE394 | ||
Description | Silicon NPN Transistor Power Amp / High Voltage Switch | ||
Fabricant | NTE | ||
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1 Page
NTE394
Silicon NPN Transistor
Power Amp, High Voltage Switch
Description:
The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use
in high voltage, fast switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage (IC = 0), VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Power Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Cutoff Current
ICEO VCE = 300V, IB = 0
Emitter–Base Cutoff Current
Collector–Emitter Sustaining Voltage
ICES
IEBO
VCEO(sus)
VCE = 500V, VEB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0, Note 1
Collector–Emitter Saturation Voltage
VCE(sat) IC = 3A, IB = 0.6A, Note 1
Base–Emitter ON Voltage
VBE(on) IC = 3A, VCE = 10V, Note 1
DC Current Gain
hFE IC = 0.3A, VCE = 10V
IC = 3A, VCE = 10V
Min Typ Max Unit
– – 1 mA
– – 1 mA
– – 1 mA
400 – – V
– – 1.5 V
– – 1.5 V
30 150 –
10 –
–
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
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Pages | Pages 2 | ||
Télécharger | [ NTE394 ] |
No | Description détaillée | Fabricant |
NTE39 | Silicon PNP Transistor Line-Operated Series Pass/Switching Regulator (Compl to NTE157) | NTE |
NTE390 | Silicon Complementary Transistors General Purpose | NTE |
NTE391 | Silicon Complementary Transistors | NTE |
NTE392 | Silicon Complementary Transistors General Purpose | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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