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NTE - Silicon PNP Transistor Line-Operated Series Pass/Switching Regulator (Compl to NTE157)

Numéro de référence NTE39
Description Silicon PNP Transistor Line-Operated Series Pass/Switching Regulator (Compl to NTE157)
Fabricant NTE 
Logo NTE 





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NTE39 fiche technique
NTE39
Silicon PNP Transistor
Line–Operated Series Pass/Switching Regulator
(Compl to NTE157)
Description:
The NTE39 is a silicon PNP transistor in a TO126 type package designed for use in line–operated
applications such as low power, line–operated series pass and switching regulators requiring PNP
capability.
Features:
D High Collector–Emitter Sustaining Voltage: VCEO(sus) = 300V @ IC = 1.0mA
D Excellent DC Current Gain: hFE = 30 to 240 @ IC = 50mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction to case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
VCEO(sus) IC = 1.0mA, IB = 0
ICEO VCB = 300V, IE = 0
IEBO VEB = 3V, IC = 0
DC Current Gain
hFE IC = 50mA, VCE = 10V
Min Typ Max Unit
300 – – V
– – 100 µA
– – 100 µA
30 – 240

PagesPages 2
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