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Número de pieza | NTE350 | |
Descripción | Silicon NPN Transistor RF Power Amp / Driver | |
Fabricantes | NTE | |
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Hay una vista previa y un enlace de descarga de NTE350 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! NTE350
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE350 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in commercial and industrial equipment to
300MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power = 15W
Minimum Gain = 6.3dB
Efficiency = 60%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Device Dissipation (Note 1, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CEO IC = 20mA, IB = 0
V(BR)CES IC = 10mA, VBE = 0
V(BR)EBO IE = 1mA, IC = 0
ICBO VCB = 15V, IE = 0
ICES VCE = 15V, VBE = 0, TC = +55°C
DC Current Gain
hFE IC = 500mA, VCE = 5V
Min Typ Max Unit
18 –
–V
36 –
–V
4 – –V
– – 0.5 mA
– – 8 mA
5––
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet NTE350.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTE350 | Silicon NPN Transistor RF Power Amp / Driver | NTE |
NTE351 | Silicon NPN Transistor RF Power Amp / Driver | NTE |
NTE352 | Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount) | NTE |
NTE353 | Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz | NTE |
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