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NTE - Silicon NPN Transistor RF Power Amp / Driver

Numéro de référence NTE349
Description Silicon NPN Transistor RF Power Amp / Driver
Fabricant NTE 
Logo NTE 





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NTE349 fiche technique
NTE349
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V
VHF large–signal amplifier applications required in military and industrial equipment to 240MHz.
Features:
D Specified 13.6V, 175MHz Characteristics:
Output Power = 10W
Minimum Gain = 5.2dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0171mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO IC = 200mA, IB = 0
V(BR)EBO IE = 2.5mA, IC = 0
ICBO VCB = 15V, IE = 0
18 –
–V
4 – –V
– – 1.0 mA
ON Characteristics
DC Current Gain
Dynamic Characteristics
hFE IC = 250mA, VCE = 5V
5––
Output Capacitance
Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz –
35 70 pF

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