|
|
PDF NTE345 Data sheet ( Hoja de datos )
| Número de pieza | NTE345 | |
| Descripción | Silicon NPN Transistor RF Power Amp / Driver | |
| Fabricantes | NTE | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTE345 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
NTE345
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE345 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V
large–signal amplifier applications in industrial and commercial FM equipment operating to 175MHz.
This device is ideally suited for marine radio applications.
Features:
D Specified 13.6V, 160MHz Characteristics:
Output Power = 30W
Minimum Gain = 9dB
Efficiency = 60%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.37W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
ON Characteristics
V(BR)CEO IC = 100mA, IB = 0
V(BR)CBO IC = 15mA, IE = 0
V(BR)EBO IE = 5mA, IC = 0
18 –
36 –
4–
–V
–V
–V
DC Current Gain
Dynamic Characteristics
hFE IC = 1A, VCE = 5V
5––
Output Capacitance
Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz – 110 130 pF
Functional Tests (VCC = 13.6V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
GPE Pout = 30W, f = 160MHz
9 10 – dB
Collector Efficiency
η Pout = 30W, f = 160MHz
60 –
–%
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE345.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTE340 | Silicon NPN Transistor RF Power Output / High Frequency | NTE |
| NTE341 | Silicon NPN Transistor RF Power Output | NTE |
| NTE342 | Silicon NPN Transistor RF Power Output (PO = 6W / 175MHz) | NTE |
| NTE343 | Silicon NPN Transistor RF Power Output (PO = 14W / 175MHz) | NTE |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |