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Numéro de référence | NTE3322 | ||
Description | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | ||
Fabricant | NTE | ||
Logo | |||
1 Page
NTE3322
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance
D High Speed
D Low Saturation Voltage
D Enhancement Mode
Applications:
D High Power Switching
Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.625°C/W
Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8Nm
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
Collector Cutoff Current
Collector–Emitter Breakdown Voltage
IGES
ICES
V(BR)CES
VGE = ±25V, VCE = 0
VCE = 900V, VGE = 0
IC = 2mA, VGE = 0
Gate–Emitter Cutoff Voltage
VGE(off) IC = 60mA, VCE = 5V
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, VGE = 15V
Input Capacitance
Rise Time
Turn–On Time
IC = 60A, VGE = 15V
Cies VCE = 10V, VGE = 0, f = 1MHz
tr VCC = 600V
ton
Fall Time
tf
Turn–Off Time
toff
Min Typ Max Unit
– – ±500 nA
– – 1.0 mA
900 – – V
3.0 – 6.0 V
– – 2.4 V
– 2.4 3.7 V
– 5300 – pF
– 0.25 0.60 µs
– 0.35 0.80 µs
– 0.25 0.40 µs
– 0.50 1.00 µs
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Pages | Pages 2 | ||
Télécharger | [ NTE3322 ] |
No | Description détaillée | Fabricant |
NTE332 | Silicon Complementary Transistors | NTE |
NTE3320 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | NTE |
NTE3321 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | NTE |
NTE3322 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | NTE |
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