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Numéro de référence | NTE3300 | ||
Description | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | ||
Fabricant | NTE | ||
Logo | |||
1 Page
NTE3300
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance
D Low Saturation Voltage
D Enhancement Mode
D 20V Gate Drive
Applications:
D High Power Switching
D Motor Control
Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Gate–Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.16°C/W
Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6N•m
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
Collector Cutoff Current
IGES
ICES
VGE = ±25V, VCE = 0
VCE = 400V, VGE = 0
Collector–Emitter Breakdown Voltage V(BR)CES IC = 2mA, VGE = 0
Gate–Emitter Cutoff Voltage
VGE(off) IC = 1mA, VCE = 5V
Collector–Emitter Saturation Voltage
Input Capacitance
Rise Time
Turn–On Time
VCE(sat)
Cies
tr
ton
IC = 130A, VGE = 20V (Pulsed)
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V
Fall Time
tf
Turn–Off Time
toff
Min Typ Max Unit
– – ±100 nA
– – 1.0 µA
400 – – V
4.0 5.0 7.0 V
– 5.0 8.0 V
– 1350 – pF
– 0.1 0.5 µs
– 0.15 0.50 µs
– 4.0 6.0 µs
– 4.5 7.0 µs
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Pages | Pages 2 | ||
Télécharger | [ NTE3300 ] |
No | Description détaillée | Fabricant |
NTE330 | Germanium PNP Transistor High Power Switch | NTE |
NTE3300 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | NTE |
NTE3301 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | NTE |
NTE3302 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | NTE |
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