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Numéro de référence | NTE330 | ||
Description | Germanium PNP Transistor High Power Switch | ||
Fabricant | NTE | ||
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1 Page
NTE330
Germanium PNP Transistor
High Power Switch
Description:
The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation
voltage capability for high efficiency performance in motor drive controls and low loss regulators.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +95°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +95°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Floating Potential
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
V(BR)CEO
VEBF
ICBO
IEBO
IC = 1A, IB = 0
VCB = 50V, IE = 0
VCB = 2V, IE = 0
VCB = 50V, IE = 0
VCB = 50V, IE = 0, TB = +85°C
VBE = 30V, IC = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 4V, IC = 15A
VCE = 4V, IC = 25A
IC = 25A, IB = 4A
IC = 25A, IB = 3A
Common–Emitter Cutoff Frequency
hhfe VCE = 6V, IC = 5A
Min Typ Max Unit
40 – – V
– – 1.0 V
– – 300 µA
– – 4.0 mA
– – 15 mA
– – 8.0 mA
15 – 60
12 – –
– – 0.7 V
– – 1.5 V
– 4.0 – kHz
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Pages | Pages 2 | ||
Télécharger | [ NTE330 ] |
No | Description détaillée | Fabricant |
NTE330 | Germanium PNP Transistor High Power Switch | NTE |
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