DataSheetWiki


NTE325 fiches techniques PDF

NTE - Silicon NPN RF Power Transistor 50W @ 30MHz

Numéro de référence NTE325
Description Silicon NPN RF Power Transistor 50W @ 30MHz
Fabricant NTE 
Logo NTE 





1 Page

No Preview Available !





NTE325 fiche technique
NTE325
Silicon NPN RF Power Transistor
50W @ 30MHz
Description:
The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier
applications in industrial, commercial, and amateur radio equipment to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 50W
Minimum Gain = 11dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.53°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
ON Characteristics
V(BR)CEO IC = 100mA, IB = 0
V(BR)CES IC = 20mA, VBE = 0
V(BR)CBO IC = 20mA, IE = 0
V(BR)EBO IE = 10mA, IC = 0
20 –
40 –
40 –
4–
–V
–V
–V
–V
DC Current Gain
Dynamic Characteristics
hFE IC = 1A, VCE = 5V
10 –
Output Capacitance
Cob VCB = 15V, IE = 0, f = 1MHz – – 200 pF

PagesPages 2
Télécharger [ NTE325 ]


Fiche technique recommandé

No Description détaillée Fabricant
NTE32 Silicon Complementary Transistors NTE
NTE
NTE320 Silicon NPN RF Power Transistor 40W @ 175MHz NTE
NTE
NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz NTE
NTE
NTE322 Silicon NPN Transistor RF Power Output NTE
NTE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche