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NTE - Silicon NPN Transistor RF Power Output

Numéro de référence NTE318
Description Silicon NPN Transistor RF Power Output
Fabricant NTE 
Logo NTE 





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NTE318 fiche technique
NTE318
Silicon NPN Transistor
RF Power Output
Description:
The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-
tions. This device utilizes improved metallization systems to achieve extreme ruggedness under se-
vere operating conditions.
Features:
D Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain
D Withstands severe mismatch under operating conditions
D Low inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Device Dissipation (+25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 200mA, IB = 0, Note 1
18 – – V
Collector–Emitter Breakdown Voltage V(BR)CES IC = 200mA, VBE = 0, Note 1 36 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 2.5mA, IC = 0
4––V
Collector Cut–Off Current
ICBO VCB = 15V, IE = 0
– – 1 mA
DC Current Gain
hFE VCE = 5V, IC = 250mA
10 – –
Gain Bandwidth
ft VCE = 13.5V, IC = 100mA
200 – – MHz
Output Capacitance
Cob VCB = 12.5V, IC = 0,
–FO = 1.0MHz
– – 200 pF
Amplifier Power Out
PO 28MHz/12.5V
47 – – W
Amplifier Power Gain
Pg
10 – – dB
Note 1. Pulsed through 25mH Inductor

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