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NTE3086 fiches techniques PDF

NTE - Optoisolator Dual NPN Transistor Output

Numéro de référence NTE3086
Description Optoisolator Dual NPN Transistor Output
Fabricant NTE 
Logo NTE 





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NTE3086 fiche technique
NTE3086
Optoisolator
Dual NPN Transistor Output
Description:
The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon photo-
transistor per channel. This device is constructed with a high voltage insulation, double molded pack-
aging process which offers 7.5KV withstand test capability.
Features:
D Two isolated Channels per Package
D 7500V Withstand Test Voltage
D CTR Minimum: 20%
Absolute Maximum Ratings:
Gallium Arsenide LED (Each Channel)
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/°C
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width 1µs, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Phototransistor (Each Channel)
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Collector–Emitter Breakdow Voltage, V(BR)CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Breakdow Voltage, V(BR)CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Collector Breakdow Voltage, V(BR)ECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Total Device
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +250°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gallium Arsenide LED
Forward Voltage
Reverse Voltage
Reverse Current
Junction Capacitance
VF IF = 20mA
VR IR = 10µA
IR VR = 3V
V = 0, f = 1MHz
Min Typ Max Unit
– 1.1 1.5 V
3 25 – V
– – 10 µA
– 80 – pF

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