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PDF NTE3029A Data sheet ( Hoja de datos )
| Número de pieza | NTE3029A | |
| Descripción | Infrared-Emitting Diode | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE3029A
Infrared–Emitting Diode
Description:
The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications.
This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long
lifetime.
Features:
D Low Cost
D Low Degradation
D New Mold Technology Improves Performance under Variable Environmental Conditions
D New Lens Design offers Improved Optical Performance
Applications:
D Low Bit Rate Communication Systems
D Keyboards
D Coin Handlers
D Paper Handlers
D Touch Screens
D Shaft Encoders
D General Purpose Interruptive and Reflective
Event Sensors
Absolute Maximum Ratings:
Reverse Breakdown Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Device Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Ambient Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Lead Temperature (During Soldering, Note 3), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B.
Note 2 Measured with device soldered into a typical printed circuit board.
Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should
be applied in order to prevent the case temperature from exceeding +100°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions
Reverse Leakage Current
IR VR = 6V
Forward Voltage
VF IF = 50mA
Temperature Coefficient of Forward Voltage ∆VF
Capacitance
C V = 0V, f = 1MHz
Min Typ Max Unit
– 0.05 100 µA
– 1.3 1.5 V
– –1.6 – mV/°C
– 24 50 pF
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE3029A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| NTE3029B | Infrared-Emitting Diode | NTE |
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