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Numéro de référence | NTE3029 | ||
Description | Infrared-Emitting Diode | ||
Fabricant | NTE | ||
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1 Page
NTE3029A
Infrared–Emitting Diode
Description:
The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications.
This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long
lifetime.
Features:
D Low Cost
D Low Degradation
D New Mold Technology Improves Performance under Variable Environmental Conditions
D New Lens Design offers Improved Optical Performance
Applications:
D Low Bit Rate Communication Systems
D Keyboards
D Coin Handlers
D Paper Handlers
D Touch Screens
D Shaft Encoders
D General Purpose Interruptive and Reflective
Event Sensors
Absolute Maximum Ratings:
Reverse Breakdown Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Device Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Ambient Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Lead Temperature (During Soldering, Note 3), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B.
Note 2 Measured with device soldered into a typical printed circuit board.
Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should
be applied in order to prevent the case temperature from exceeding +100°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions
Reverse Leakage Current
IR VR = 6V
Forward Voltage
VF IF = 50mA
Temperature Coefficient of Forward Voltage ∆VF
Capacitance
C V = 0V, f = 1MHz
Min Typ Max Unit
– 0.05 100 µA
– 1.3 1.5 V
– –1.6 – mV/°C
– 24 50 pF
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Pages | Pages 2 | ||
Télécharger | [ NTE3029 ] |
No | Description détaillée | Fabricant |
NTE3020 | Light Emitting Diode (LED) | NTE |
NTE3024 | Light Emitting Diode (LED) | NTE |
NTE3025 | Light Emitting Diode (LED) | NTE |
NTE3026 | Light Emitting Diode (LED) | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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