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Numéro de référence | NTE291 | ||
Description | Silicon Complementary Transistors Medium Power Amp / Switch | ||
Fabricant | NTE | ||
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NTE291 (NPN) & NTE292 (PNP)
Silicon Complementary Transistors
Medium Power Amp, Switch
Description:
The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementa-
ry transistors in a TO220 type package designed for switching and amplifier applications. They are
especially designed for series and shunt regulators and as a driver and output stage of high–fidelity
amplifiers.
Features:
D Low Saturation Voltage
Absolute Maximum Ratings:
Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V
Collector–to–Emitter Voltage (RBB = 100Ω, VBB = 0), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–To–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current (TC ≤ +106°C), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Continuous Base Current (TC ≤ +130°C), IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Power Dissipation, PD
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Derate Linearly Above TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Linearly Above TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W
Derate Linearly Above TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0144W/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering), TL
At distance ≥ 1/8 in. (3.17mm) from case for 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . +235°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W
Note 1. NTE292MCP is a matched complementary pair containing 1 each of NTE291 (NPN) and
NTE292 (PNP).
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Pages | Pages 2 | ||
Télécharger | [ NTE291 ] |
No | Description détaillée | Fabricant |
NTE29 | Silicon Complementary Transistors High Power / High Current Switch | NTE |
NTE290 | Silicon Complementary Transistors | NTE |
NTE2900 | MOSFET N-Ch / Enhancement Mode High Speed Switch | NTE |
NTE290A | Silicon Complementary Transistors | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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