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NTE - Integrated Circuit NMOS / 16K UV Erasable PROM

Numéro de référence NTE2716
Description Integrated Circuit NMOS / 16K UV Erasable PROM
Fabricant NTE 
Logo NTE 





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NTE2716 fiche technique
NTE2716
Integrated Circuit
NMOS, 16K UV Erasable PROM
Description:
The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a
24–Lead DIP type package designed for system debug usage and similar applications requiring non-
volatile memory that could be reprogrammed periodically. The transparent lid on the package allows
the memory content to be erased with ultraviolet light.
The NTE2716 operates from a single power supply and has a static power down mode.
Features:
D Single 5V Power Supply
D Automatic Power–Down Mode (Standby)
D Organized as 2048 Bytes of 8Bits
D TTL Compatible During Read and Program
D Access Time: 350ns
D Output Enable Active Level is User Selectable
Absolute Maximum Ratings: (Note 1)
All Input or Output Voltages (with respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 to –0.3V
VPP Supply Voltage (with respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 to –0.3V
Temperature Under Bias (VPP = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10° to +80°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range. Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Note 1. Permanent device may occur if “Absolute Maximum Ratings” are exceeded. Functional op-
eration should be restricted to “Recommended Operating Conditions”. Exposure to higher
than recommended voltages for extended periods of time could affect device reliability.
Note 2. This device contains circuitry to protect the inputs against damage due to high static voltages
or electric fields; however, it is advised that normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high–impedance circuit.

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