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NTE2553 fiches techniques PDF

NTE - Silicon NPN Transistor Darlington / Motor Driver / Switch

Numéro de référence NTE2553
Description Silicon NPN Transistor Darlington / Motor Driver / Switch
Fabricant NTE 
Logo NTE 





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NTE2553 fiche technique
NTE2553
Silicon NPN Transistor
Darlington, Motor Driver, Switch
Features:
D High DC Current Gain
D High Breakdown Voltage
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cut–Off Current
ICBO VCB = 300V, IE = 0
Emitter Cut–Off Current
IEBO VEB = 6V, IC = 0
Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 250mA, L 40mH
DC Current Gain
hFE VCE = 2V, IC = 5A
VCE = 2V, IC = 10A
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 100mA
Base–Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 100mA
Emitter–Collector Forward Voltage VECF IE = 10A, IB = 0
Transition Frequency
fT VCE = 2V, IC = 1A
Collector Output Capacitance
Cob VCB = 10V, IE = 0, f = 1MHz
Turn–On Time
Storage Time
ton VCC = 100V,
tstg IB1 = –IB2 = 100mA
Fall Time
tf
Min Typ Max Unit
– – 100 µA
50 – 150 mA
300 – – V
200 – – V
500 – 5000
100 – –
– – 2.0 V
– – 2.3 V
– 1.5 2.0 V
– 40 – MHz
– 200 – pF
– – 1.0 µs
– – 12 µs
– – 2.0 µs

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