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Numéro de référence | NTE2544 | ||
Description | Silicon NPN Transistor Darlington Driver | ||
Fabricant | NTE | ||
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1 Page
NTE2544
Silicon NPN Transistor
Darlington Driver
Features:
D Darlington Conncetion
D High DC Current Gain
D Low Dependence of DC Current Gain on Temperature
Applications:
D Motor Driver
D Printer Hammer Driver
D Relay Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltge, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
Collector Dissiption, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 0.5A
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
VCE = 3V, IC = 1A
VCE(sat) IC = 1A, IB = 2mA
VBE(sat) IC = 1A, IB = 2mA
V(BR)CBO IC = 100µA, IE = 0
V(BR)CEO IC = 10mA, RBE = ∞
Min Typ Max Unit
– – 10 µA
– – 2.5 mA
1000 –
–
2000 – 30000
– – 1.5 V
– – 2.0 V
120 – – V
120 – – V
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Pages | Pages 2 | ||
Télécharger | [ NTE2544 ] |
No | Description détaillée | Fabricant |
NTE254 | Silicon Complementary Transistors | NTE |
NTE2540 | Silicon NPN Transistor Darlington / High Voltage Switch | NTE |
NTE2541 | Silicon Complementary Transistors Darlington / Motor/Relay Driver | NTE |
NTE2542 | Silicon Complementary Transistors | NTE |
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