DataSheetWiki


NTE2506 fiches techniques PDF

NTE - Silicon NPN Transistor High Frequency Video Driver

Numéro de référence NTE2506
Description Silicon NPN Transistor High Frequency Video Driver
Fabricant NTE 
Logo NTE 





1 Page

No Preview Available !





NTE2506 fiche technique
NTE2506
Silicon NPN Transistor
High Frequency Video Driver
Description:
The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the
cascode stage of the driver for high–resolution color graphics monitors.
Features:
D High Breakdown Voltage
D Low Output Capacitance
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V
Collector–Emitter Voltage (RBE = 100), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Power Dissipation (TS +85°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Soldering Point (TS +85°C, Note 1), RthJS . . . . . . . . . . 18K/W
Note 1. TS is the temperature at the soldering point of the collector lead.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA
115 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA
95 – – V
V(BR)CER IC = 10mA, RBE = 100
110 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA
3––V
Collector Cutoff Current
ICES IB = 0, VCE = 50V
– – 100 µA
ICBO IE = 0, VCB = 50V
– – 20 µA
DC Current Gain
hFE IC = 100mA, VCE = 10V, TA = +25°C
20 35 –
Transition Frequency
fT IC = 100mA, VCE = 10V, f = 100MHz, 0.8 1.2 – GHz
TA = +25°C
Collector–Base Capacitance
Ccb IC = 0, VCB = 10V, f = 1MHz, TA = +25°C – 2.0 – pF
Collector Capacitance
Cc IE = ie = 0, VCB = 10V f = 1MHz
– 3.5 – pF

PagesPages 2
Télécharger [ NTE2506 ]


Fiche technique recommandé

No Description détaillée Fabricant
NTE250 Silicon Complementary Transistors NTE
NTE
NTE2501 Silicon Complementary Transistors High Voltage for Video Output NTE
NTE
NTE2502 Silicon Complementary Transistors NTE
NTE
NTE2503 Silicon NPN Transistor High Gain Switch NTE
NTE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche