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Numéro de référence | NTE2506 | ||
Description | Silicon NPN Transistor High Frequency Video Driver | ||
Fabricant | NTE | ||
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1 Page
NTE2506
Silicon NPN Transistor
High Frequency Video Driver
Description:
The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the
cascode stage of the driver for high–resolution color graphics monitors.
Features:
D High Breakdown Voltage
D Low Output Capacitance
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V
Collector–Emitter Voltage (RBE = 100Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Power Dissipation (TS ≤ +85°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Soldering Point (TS ≤ +85°C, Note 1), RthJS . . . . . . . . . . 18K/W
Note 1. TS is the temperature at the soldering point of the collector lead.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA
115 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA
95 – – V
V(BR)CER IC = 10mA, RBE = 100Ω
110 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA
3––V
Collector Cutoff Current
ICES IB = 0, VCE = 50V
– – 100 µA
ICBO IE = 0, VCB = 50V
– – 20 µA
DC Current Gain
hFE IC = 100mA, VCE = 10V, TA = +25°C
20 35 –
Transition Frequency
fT IC = 100mA, VCE = 10V, f = 100MHz, 0.8 1.2 – GHz
TA = +25°C
Collector–Base Capacitance
Ccb IC = 0, VCB = 10V, f = 1MHz, TA = +25°C – 2.0 – pF
Collector Capacitance
Cc IE = ie = 0, VCB = 10V f = 1MHz
– 3.5 – pF
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Pages | Pages 2 | ||
Télécharger | [ NTE2506 ] |
No | Description détaillée | Fabricant |
NTE250 | Silicon Complementary Transistors | NTE |
NTE2501 | Silicon Complementary Transistors High Voltage for Video Output | NTE |
NTE2502 | Silicon Complementary Transistors | NTE |
NTE2503 | Silicon NPN Transistor High Gain Switch | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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