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NTE - Silicon NPN Transistor Low Frequency / General Purpose Amp

Numéro de référence NTE2505
Description Silicon NPN Transistor Low Frequency / General Purpose Amp
Fabricant NTE 
Logo NTE 





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NTE2505 fiche technique
NTE2505
Silicon NPN Transistor
Low Frequency, General Purpose Amp
Features:
D High Current Capacity
D High DC Current Gain
D Low Collector Emitter Saturation Voltage
D High Emitter Base Breakdown Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB = 20V, IE = 0
VEB = 10V, IC = 0
VCE = 5V, IC = 500mA
VCE = 5V, IC = 1A
VCE = 10V, IC = 50mA
VCB = 10V, f = 1MHz
IC = 1A, IB = 20mA
IC = 1A, IB = 20mA
Min Typ Max Unit
– – 100 nA
– – 100 nA
800 1500 3200
600 – –
– 260 – MHz
– 27 – pF
– 0.15 0.5 V
– 0.85 1.2 V

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