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Numéro de référence | NTE2428 | ||
Description | Silicon Complementary Transistors General Purpose Switch | ||
Fabricant | NTE | ||
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1 Page
NTE2428 (NPN) & NTE2429 (PNP)
Silicon Complementary Transistors
General Purpose Switch
Description:
The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount
package designed for use in thick and thin film circuits. Typical applications include telephone and
general industrial.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
DC Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO VCB = 60V, IE = 0
VCB = 60V, IE = 0, TJ = +150°C
V(BR)CEO IC = 10mA, IB = 0
V(BR)CES IC = 10µA, VBE = 0
V(BR)EBO IE = 10µA, IC = 0
VCE(sat) IC = 150mA, IB = 15mA, Note 2
IC = 500mA, IB = 50mA, Note 2
VBE(sat) IC = 150mA, IB = 15mA, Note 2
IC = 500mA, IB = 50mA, Note 2
Note 2. Measured under pulsed conditions.
Min Typ Max Unit
– – 100 nA
– – 50 µA
80 – – V
90 – – V
5––V
– – 250 mV
– – 500 mV
– – 1.0 V
– – 1.2 V
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Pages | Pages 2 | ||
Télécharger | [ NTE2428 ] |
No | Description détaillée | Fabricant |
NTE242 | Silicon Complementary Transistors | NTE |
NTE2426 | Silicon Complementary Transistors Darlington Switch | NTE |
NTE2427 | Silicon Complementary Transistors | NTE |
NTE2428 | Silicon Complementary Transistors General Purpose Switch | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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