DataSheetWiki


NTE2408 fiches techniques PDF

NTE - Silicon NPN Transistor General Purpose Amp / Surface Mount (Compl to NTE2409)

Numéro de référence NTE2408
Description Silicon NPN Transistor General Purpose Amp / Surface Mount (Compl to NTE2409)
Fabricant NTE 
Logo NTE 





1 Page

No Preview Available !





NTE2408 fiche technique
NTE2408
Silicon NPN Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2409)
Description:
The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Emitter Current, IEM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TA = +60°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 ° to +150°C
Thermal Resistance, Junction–to–Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 90K/W
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
ICBO
VBE
VCE(sat)
VCB = 30V, IE = 0
VCB = 30V, IE = 0, TA = +150°C
VCE = 5V, IC = 2mA, Note 2
VCE = 5V, IC = 10mA, Note 2
IC = 10mA, IB = 0.5mA, Note 3
IC = 100mA, IB = 5mA, Note 3
Min Typ Max Unit
– – 15 nA
– – 5 µA
580 660 700 mV
– – 770 mV
– 90 250 mV
– 200 600 mV
Note 2. VBE decreases by about 2mV/K with increasing temperature.
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.

PagesPages 2
Télécharger [ NTE2408 ]


Fiche technique recommandé

No Description détaillée Fabricant
NTE240 Silicon Complementary Transistors NTE
NTE
NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends NTE
NTE
NTE2402 Silicon Complementary Transistors Low Noise / UHF/VHF Amplifier NTE
NTE
NTE2403 Silicon Complementary Transistors NTE
NTE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche