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Numéro de référence | NTE24 | ||
Description | Silicon Complementary Transistors General Purpose Amplifier / Switch | ||
Fabricant | NTE | ||
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1 Page
NTE24 (NPN) & NTE25 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package
designed for general purpose medium power amplifier and switching circuits that require collector cur-
rents to 1A.
Features:
D High Collector–Emitter Breakdown Voltage: VCEO = 80V
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Junction Temperature, TJ(max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 50mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 500mA
Min Typ Max Unit
80 – – V
– – 0.1 µA
– – 100 nA
40 –
–
40 –
–
25 –
–
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Pages | Pages 2 | ||
Télécharger | [ NTE24 ] |
No | Description détaillée | Fabricant |
NTE20 | Silicon Complementary Transistors High Power / Low Collector Saturation Voltage Power Output | NTE |
NTE2000 | (NTExxxx) Linear Integrated Circuits | NTE Electronics |
NTE2001 | (NTExxxx) Linear Integrated Circuits | NTE Electronics |
NTE2003 | Integrated Circuit Dolby B-Type Noise Reduction Processor | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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