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NTE24 fiches techniques PDF

NTE - Silicon Complementary Transistors General Purpose Amplifier / Switch

Numéro de référence NTE24
Description Silicon Complementary Transistors General Purpose Amplifier / Switch
Fabricant NTE 
Logo NTE 





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NTE24 fiche technique
NTE24 (NPN) & NTE25 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package
designed for general purpose medium power amplifier and switching circuits that require collector cur-
rents to 1A.
Features:
D High Collector–Emitter Breakdown Voltage: VCEO = 80V
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Junction Temperature, TJ(max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 50mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 500mA
Min Typ Max Unit
80 – – V
– – 0.1 µA
– – 100 nA
40 –
40 –
25 –

PagesPages 2
Télécharger [ NTE24 ]


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