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Numéro de référence | NTE2395 | ||
Description | MOSFET N-Ch / Enhancement Mode High Speed Switch | ||
Fabricant | NTE | ||
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1 Page
NTE2395
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Dynamic dv/dt Rating
D +1755C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
D
G
S
Absolute Maximum Ratings:
Continuous
TTCC
=
=
+D2ra5i5nCC(uNroretent1()V.G.S.
+1005C . . . . . . . . . .
=
..
..
10V),
.....
.....
.ID. .
...
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50A
36A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A
Power
DDeisrsaitpeaLtiionnea(TrlCy
A=b+o2v5e5C25),5PCD
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. . 150W
1.0W/5C
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +3005C
Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.05C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W
Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.55C/W
Note 1. Current limited by the package, (Die Current = 51A).
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. VDD = 25V, starting TJ = +255C, L = 443H, RG = 25+ , IAS = 51A
Note 4. ISD 3 51A, di/dt 3 250A/3s, VDD 3 V(BR)DSS, TJ 3 +1755C
Rev. 10−13
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Pages | Pages 3 | ||
Télécharger | [ NTE2395 ] |
No | Description détaillée | Fabricant |
NTE239 | Silicon Controlled Switch (SCS) | NTE |
NTE2390 | MOSFET N-Channel Enhancement Mode / High Speed Switch | NTE |
NTE2392 | MOSFET N-Channel Enhancement Mode / High Speed Switch | NTE |
NTE2393 | MOSFET N-Channel Enhancement Mode / High Speed Switch | NTE |
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